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features ? single power supply 5v operation for read, erase and program ? fast access time: 90/120ns ? low power consumption - 30ma maximum active current - 0.2ua typical standby current ? command register architecture - byte programming (7us typical) - sector erase:32 equal sector with of 64kbyte each ? auto erase (chip & sector) and auto program - automatically erase any combination of sectors with erase suspend capability. - automatically program and verify data at specified address ? erase suspend/erase resume - suspends an erase operation to read data from, or program data to, another sector that is not being erased, then resumes the erase. during erase and programming, while maintaining maximum eprom compatibility. mxic flash technology reliably stores memory contents even after 100,000 erase and program cycles. the mxic cell is designed to optimize the erase and program mechanisms. in addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. the mx29f016 uses a 5.0v 10% vcc supply to perform the high reliability erase and auto program/erase algorithms. the highest degree of latch-up protection is achieved with mxic's proprietary non-epi process. latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1v to vcc + 1v. general description the mx29f016 is a 16-mega bit flash memory organized as 2m bytes of 8 bits. mxic's flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. the mx29f016 is packaged in 40-pin tsop or 44-pin sop, 48-pin tsop. it is designed to be reprogrammed and erased in system or in standard eprom programmers. the standard mx29f016 offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states. to eliminate bus contention, the mx29f016 has separate chip enable (ce) and output enable (oe ) controls. mxic's flash memories augment eprom functionality with in-circuit electrical erasure and programming. the mx29f016 uses a command register to manage this functionality. the command register allows for 100% ttl level control inputs and fixed power supply levels ? status reply - data polling & toggle bit for detection of program and erase cycle completion. ? group sector protect/unprotect for 5v/12v system. ? group sector protection - hardware sector protect/unprotect method for each group which consists of two adjacent sectors - temporary group sector unprotect allows code changes in previously locked sectors ? 100,000 minimum erase/program cycles ? latch-up protected to 100ma from -1v to vcc+1v ? low vcc write inhibit is equal to or less than 3.2v ? package type: - 40-pin tsop, 44-pin sop, 48-pin tsop ? compatibility with jedec standard - pinout and software compatible with single-power supply flash 1 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 16m-bit [2m x 8] cmos equal sector flash memory
2 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 pin configurations 40 tsop (standard type) (10mm x 20mm) symbol pin name a0~a20 address input q0~q7 8 data inputs/outputs ce chip enable input we write enable input oe output enable input reset hardware reset pin, active low ry/by read/busy output vcc +5.0v single power supply vss device ground nc pin not connected internally pin description 44 sop 48 tsop (standard type) (12mm x 20mm) a19 a18 a17 a16 a15 a14 a13 a12 ce vcc nc reset a11 a10 a9 a8 a7 a6 a5 a4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 a20 nc we oe ry/by q7 q6 q5 q4 vcc vss vss q3 q2 q1 q0 a0 a1 a2 a3 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 mx29f016 nc nc a19 a18 a17 a16 a15 a14 a13 a12 ce vcc nc reset a11 a10 a9 a8 a7 a6 a5 a4 nc nc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 nc nc a20 nc we oe ry/by q7 q6 q5 q4 vcc vss vss q3 q2 q1 q0 a0 a1 a2 a3 nc nc 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 mx29f016 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 nc reset a11 a10 a9 a8 a7 a6 a5 a4 nc nc a3 a2 a1 a0 q0 q1 q2 q3 vss vss vcc ce a12 a13 a14 a15 a16 a17 a18 a19 nc nc a20 nc we oe ry/by q7 q6 q5 q4 vcc mx29f016
3 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 group sector a20 a19 a18 a17 a16 address range sector sga0 sa0 0 0 0 0 0 000000h-00ffffh sga0 sa1 0 0 0 0 1 010000h-01ffffh sga0 sa2 0 0 0 1 0 020000h-02ffffh sga0 sa3 0 0 0 1 1 030000h-03ffffh sga1 sa4 0 0 1 0 0 040000h-04ffffh sga1 sa5 0 0 1 0 1 050000h-05ffffh sga1 sa6 0 0 1 1 0 060000h-06ffffh sga1 sa7 0 0 1 1 1 070000h-07ffffh sga2 sa8 0 1 0 0 0 080000h-08ffffh sga2 sa9 0 1 0 0 1 090000h-09ffffh sga2 sa10 0 1 0 1 0 0a0000h-0affffh sga2 sa11 0 1 0 1 1 0b0000h-0bffffh sga3 sa12 0 1 1 0 0 0c0000h-0cffffh sga3 sa13 0 1 1 0 1 0d0000h-0dffffh sga3 sa14 0 1 1 1 0 0e0000h-0effffh sga3 sa15 0 1 1 1 1 0f0000h-0fffffh sga4 sa16 1 0 0 0 0 100000h-10ffffh sga4 sa17 1 0 0 0 1 110000h-11ffffh sga4 sa18 1 0 0 1 0 120000h-12ffffh sga4 sa19 1 0 0 1 1 130000h-13ffffh sga5 sa20 1 0 1 0 0 140000h-14ffffh sga5 sa21 1 0 1 0 1 150000h-15ffffh sga5 sa22 1 0 1 1 0 160000h-16ffffh sga5 sa23 1 0 1 1 1 170000h-17ffffh sga6 sa24 1 1 0 0 0 180000h-18ffffh sga6 sa25 1 1 0 0 1 190000h-19ffffh sga6 sa26 1 1 0 1 0 1a0000h-1affffh sga6 sa27 1 1 0 1 1 1b0000h-1bffffh sga7 sa28 1 1 1 0 0 1c0000h-1cffffh sga7 sa29 1 1 1 0 1 1d0000h-1dffffh sga7 sa30 1 1 1 1 0 1e0000h-1effffh sga7 sa31 1 1 1 1 1 1f0000h-1fffffh legend:sa=sector address ; sga=sector group address note:all sectors are 64 kbytes in size. mx29f016 sector address table logic symbol 8 q0-q7 ry/by a0-a20 ce oe we reset 21
4 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 block diagram control input logic program/erase high voltage write s tat e machine (wsm) s tat e register mx29f016 flash array x-decoder address latch and buffer y-pass gate y-decoder array source hv command data decoder command data latch i/o buffer pgm data hv program data latch sense amplifier q0-q7 a0-a20 ce oe we
5 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 automatic programming the mx29f016 is byte programmable using the automatic programming algorithm. the automatic programming algorithm makes the external system do not need to have time out sequence nor to verify the data programmed. the typical chip programming time at room temperature of the mx29f016 is less than 15 seconds. automatic chip erase the entire chip is bulk erased using 10 ms erase pulses according to mxic's automatic chip erase algorithm. typical erasure at room temperature is accomplished in less than 19 seconds. the automatic erase algorithm automatically programs the entire array prior to electrical erase. the timing and verification of electrical erase are controlled internally within the device. automatic sector erase the mx29f016 is sector(s) erasable using mxic's auto sector erase algorithm. sector erase modes allow sectors of the array to be erased in one erase cycle. the automatic sector erase algorithm automatically programs the specified sector(s) prior to electrical erase. the timing and verification of electrical erase are controlled internally within the device. automatic programming algorithm mxic's automatic programming algorithm require the user to only write program set-up commands (including 2 unlock write cycle and a0h) and a program command (program data and address). the device automatically times the programming pulse width, provides the program verification, and counts the number of sequences. a status bit similar to data polling and a status bit toggling between consecutive read cycles, provide feedback to the user as to the status of the programming operation. automatic erase algorithm mxic's automatic erase algorithm requires the user to write commands to the command register using standard microprocessor write timings. the device will automatically pre-program and verify the entire array. then the device automatically times the erase pulse width, provides the erase verification, and counts the number of sequences. a status bit toggling between consecutive read cycles provides feedback to the user as to the status of the programming operation. register contents serve as inputs to an internal state- machine which controls the erase and programming circuitry. during write cycles, the command register internally latches address and data needed for the programming and erase operations. during a system write cycle, addresses are latched on the falling edge, and data are latched on the rising edge of we . mxic's flash technology combines years of eprom experience to produce the highest levels of quality, reliability, and cost effectiveness. the mx29f016 electrically erases all bits simultaneously using fowler- nordheim tunneling. the bytes are programmed by using the eprom programming mechanism of hot electron injection. during a program cycle, the state-machine will control the program sequences and command register will not respond to any command set. during a sector erase cycle, the command register will only respond to erase suspend command. after erase suspend is completed, the device stays in read mode. after the state machine has completed its task, it will allow the command register to respond to its full command set.
6 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 first bus second bus third bus fourth bus fifth bus sixth bus command bus cycle cycle cycle cycle cycle cycle cycle addr data addr data addr data addr data addr data addr data reset 1 xxxh f0h read 1 ra rd read silicon id 4 555h aah 2aah 55h 555h 90h adi ddi sector group protect 4 555h aah 2aah 55h 555h 90h sga 00h verify x02h 01h program 4 555h aah 2aah 55h 555h a0h pa pd chip erase 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h 555h 10h sector erase 6 555h aah 2aah 55h 555h 80h 555h aah 2aah 55h sa 30h sector erase suspend 1 xxxh b0h sector erase resume 1 xxxh 30h table1. software command definitions note: 1. adi = address of device identifier; a1=0, a0 = 0 for manufacture code,a1=0, a0 = 1 for device code. (refer to table 3) ddi = data of device identifier : c2h for manufacture code, adh for device code. x = x can be vil or vih ra=address of memory location to be read. rd=data to be read at location ra. 2.pa = address of memory location to be programmed. pd = data to be programmed at location pa. sa = address of the sector to be erased. sga = address of the sector group address bits a18-a20 select a uniqul sector group. 3.the system should generate the following address patterns: 555h or 2aah to address a10~a0 . address bit a11~a20=x=don't care for all address commands except for program address (pa) and sector address (sa). write sequence may be initiated with a11~a20 in either state. 4.for sector group protect verify operation : if read out data is 01h, it means the sector has been protected.if read out data is 00h,it means the sector is still not being protected. command definitions device operations are selected by writing specific address and data sequences into the command register. writing incorrect address and data values or writing them in the improper sequence will reset the device to the read mode. table 1 defines the valid register command sequences. note that the erase suspend (b0h) and erase resume (30h) commands are valid only while the sector erase operation is in progress.
7 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 mode pins ce oe we a0 a1 a6 a9 q0 ~ q7 read silicon id l l h l l x v id (2) c2h manufacturer code(1) read silicon id l l h h l x v id (2) adh device code(1) read l l h a0 a1 a6 a9 d out standby h x x x x x x high z output disable l h h x x x x high z write l h l a0 a1 a6 a9 d in (3) sector protect with 12v l v id (2) l x x l v id (2) x system(6) chip unprotect with 12v l v id (2) l x x h v id (2) x system(6) verify sector group protect l l h x h x v id (2) code(5) with 12v system reset x x x x x x x high z table 2. mx29f016 bus operation notes: 1. manufacturer and device codes may also be accessed via a command register write sequence. refer to table 1. 2. vid is the silicon-id-read high voltage, 11.5v to 13v. 3. refer to table 1 for valid data-in during a write operation. 4. x can be vil or vih. 5. code=00h means unprotected. code=01h means protected. a20~a18=sector group address for protect. 6. refer to sector protect/unprotect algorithm and waveform.
8 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 read/reset command the read or reset operation is initiated by writing the read/reset command sequence into the command register. microprocessor read cycles retrieve array data. the device remains enabled for reads until the command register contents are altered. if program-fail or erase-fail happen, the write of f0h will reset the device to abort the operation. a valid command must then be written to place the device in the desired state. silicon-id-read command flash memories are intended for use in applications where the local cpu alters memory contents. as such, manufacturer and device codes must be accessible while the device resides in the target system. prom programmers typically access signature codes by raising a9 to a high voltage. however, multiplexing high voltage onto address lines is not generally desired system design practice. the mx29f016 contains a silicon-id-read operation to supplement traditional prom programming methodology. the operation is initiated by writing the read silicon id command sequence into the command register. following the command write, a read cycle with a1=vil,a0=vil retrieves the manufacturer code of c2h. a read cycle with a1=vil, a0=vih returns the device code of adh for mx29f016. set-up automatic chip/sector erase chip erase is a six-bus cycle operation. there are two "unlock" write cycles. these are followed by writing the "set-up" command 80h. two more "unlock" write cycles are then followed by the chip erase command 10h. the automatic chip erase does not require the device to be entirely pre-programmed prior to executing the automatic chip erase. upon executing the automatic chip erase, the device will automatically program and verify the entire memory for an all-zero data pattern. when the device is automatically verified to contain an all-zero pattern, a self-timed chip erase and verify begin. the erase and verify operations are completed when the data on q7 is "1" at which time the device returns to the read mode. the system is not required to provide any control or timing during these operations. when using the automatic chip erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array(no erase verification command is required). if the erase operation was unsuccessful, the data on q5 is "1"(see table 4), indicating the erase operation exceed internal timing limit. the automatic erase begins on the rising edge of the last we pulse in the command sequence and terminates when the data on q7 is "1" and the data on q6 stops toggling for two consecutive read cycles, at which time the device returns to the read mode. pins a0 a1 q7 q6 q5 q4 q3 q2 q1 q0 code(hex) manufacture code vil vil 1 1 0 00010c2h device code for mx29f016 vih vil 1 0 1 01101adh table 3. silicon id code
9 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 sector erase commands the automatic sector erase does not require the device to be entirely pre-programmed prior to executing the automatic set-up sector erase command and automatic sector erase command. upon executing the automatic sector erase command, the device will automatically program and verify the sector(s) memory for an all-zero data pattern. the system is not required to provide any control or timing during these operations. when the sector(s) is automatically verified to contain an all-zero pattern, a self-timed sector erase and verify begin. the erase and verify operations are complete when the data on q7 is "1" and the data on q6 stops toggling for two consecutive read cycles, at which time the device returns to the read mode. the system is not required to provide any control or timing during these operations. when using the automatic sector erase algorithm, note that the erase automatically terminates when adequate erase margin has been achieved for the memory array (no erase verification command is required). sector erase is a six-bus cycle operation. there are two "unlock" write cycles. these are followed by writing the set-up command 80h. two more "unlock" write cycles are then followed by the sector erase command 30h. the sector address is latched on the falling edge of we, while the command(data) is latched on the rising edge of we. sector addresses selected are loaded into internal register on the sixth falling edge of we. each successive sector load cycle started by the falling edge of we must begin within 80 m s from the rising edge of the preceding we. otherwise, the loading period ends and internal auto sector erase cycle starts. (monitor q3 to determine if the sector erase timer window is still open, see section q3, sector erase timer.) any command other than sector erase(30h) or erase suspend(b0h) during the time- out period resets the device to read mode. status q7 q6 q5 q3 q2 byte program in auto program algorithm q7 toggle 0 0 1 auto erase algorithm 0 toggle 0 1 toggle erase suspend read 1 1 0 0 toggle in progress (erase suspended sector) (note1) erase suspended mode erase suspend read data data data data data (non-erase suspended sector) erase suspend program q7 toggle 0 0 1 (non-erase suspended sector) (note2) (note3) byte program in auto program algorithm q7 toggle 1 0 1 exceeded program/erase in auto erase algorithm 0 toggle 1 1 n/a time limits erase suspended mode erase suspend program q7 toggle 1 0 n/a (non-erase suspended sector) table 4. write operation status notes: 1.performing successive read operations from the erase-suspended sector will cause q2 to toggle. 2.performing successive read operations from any address will cause q6 to toggle. 3.reading the byte address being programmed while in the erase-suspend program mode will indicate logic "1" at the q2 bit. however, successive reads from the erase-suspended sector will cause q2 to toggle.
10 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 erase suspend this command only has meaning while the state machine is executing automatic sector erase operation, and therefore will only be responded during automatic sector erase operation. however, when the erase suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. after this command has been executed, the command register will initiate erase suspend mode. the state machine will return to read mode automatically after suspend is ready. at this time, state machine only allows the command register to respond to the read memory array, erase resume and program commands. the system can determine the status of the program operation using the q7 or q6 status bits, just as in the standard program operation. after an erase-suspend program operation is complete, the system can once again read array data within non-suspended blocks. erase resume this command will cause the command register to clear the suspend state and return back to sector erase mode but only if an erase suspend command was previously issued. erase resume will not have any effect in all other conditions.another erase suspend command can be written after the chip has resumed erasing. set-up automatic program commands to initiate automatic program mode, a three-cycle command sequence is required. there are two "unlock" write cycles. these are followed by writing the automatic program command a0h. once the automatic program command is initiated, the next we pulse causes a transition to an active programming operation. addresses are latched on the falling edge, and data are internally latched on therising edge of the we pulse. the rising edge of we also begins the programming operation. the system is not required to provide further controls or timings. the device will automatically provide an adequate internally generated program pulse and verify margin. if the program opetation was unsuccessful, the data on q5 is "1"(see table 4), indicating the program operation exceed internal timing limit. the automatic programming operation is completed when the data read on q6 stops toggling for two consecutive read cycles and the data on q7 and q6 are equivalent to data written to these two bits, at which time the device returns to the read mode(no program verify command is required). data polling-q7 the mx29f016 also features data polling as a method to indicate to the host system that the automatic program or erase algorithms are either in progress or completed. while the automatic programming algorithm is in operation, an attempt to read the device will produce the complement data of the data last written to q7. upon completion of the automatic program algorithm an attempt to read the device will produce the true data last written to q7. the data polling feature is valid after the rising edge of the fourth we pulse of the four write pulse sequences for automatic program. while the automatic erase algorithm is in operation, q7 will read "0" until the erase operation is competed. upon completion of the erase operation, the data on q7 will read "1". the data polling feature is valid after the rising edge of the sixth we pulse of six write pulse sequences for automatic chip/sector erase. the data polling feature is active during automatic program/erase algorithm or sector erase time-out.(see section q3 sector erase timer)
11 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 q2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (the system may use either oe or ce to control the read cycles.) but q2 cannot distinguish whether the sector is actively erasing or is erase-suspended. q6, by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for erasure. thus, both status bits are required for sectors and mode information. refer to table 4 to compare outputs for q2 and q6. reading toggle bits q6/ q2 whenever the system initially begins reading toggle bit status, it must read q7-q0 at least twice in a row to determine whether a toggle bit is toggling. typically, the system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on q7-q0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of q5 is high (see the section on q5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as q5 went high. if the toggle bit is no longer toggling, the device has successfuly completed the program or erase operation. if it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. the remaining scenario is that system initially determines that the toggle bit is toggling and q5 has not gone high. the system may continue to monitor the toggle bit and q5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation. q6:toggle bit i toggle bit i on q6 indicates whether an automatic program or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we pulse in the command sequence(prior to the program or erase operation), and during the sector time-out. during an automatic program or erase algorithm operation, successive read cycles to any address cause q6 to toggle. the system may use either oe or ce to control the read cycles. when the operation is complete, q6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, q6 toggles and returns to reading array data. if not all selected sectors are protected, the automatic erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use q6 and q2 together to determine whether a sector is actively erasing or is erase suspended. when the device is actively erasing (that is, the automatic erase algorithm is in progress), q6 toggling. when the device enters the erase suspend mode, q6 stops toggling. however, the system must also use q2 to determine which sectors are erasing or erase-suspended. alternatively, the system can use q7. if a program address falls within a protected sector, q6 toggles for approximately 2us after the program command sequence is written, then returns to reading array data. q6 also toggles during the erase-suspend-program mode, and stops toggling once the automatic program algorithm is complete. table 4 shows the outputs for toggle bit i on q6. q2:toggle bit ii the "toggle bit ii" on q2, when used with q6, indicates whether a particular sector is actively eraseing (that is, the automatic erase alorithm is in process), or whether that sector is erase-suspended. toggle bit i is valid after the rising edge of the final we pulse in the command sequence.
12 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 q5 q3 exceeded timing limits q5 will indicate if the program or erase time has exceeded the specified limits(internal pulse count). under these conditions q5 will produce a "1". this time-out condition indicates that the program or erase cycle was not successfully completed. data polling and toggle bit are the only operating functions of the device under this condition. if this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it may not be reused. however, other sectors are still functional and may be used for the program or erase operation. the device must be reset to use other sectors. write the reset command sequence to the device, and then execute program or erase command sequence. this allows the system to continue to use the other active sectors in the device. if this time-out condition occurs during the chip erase operation, it specifies that the entire chip is bad or combination of sectors are bad. if this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused). the time-out condition may also appear if a user tries to program a non blank location without erasing. in this case the device locks out and never completes the automatic algorithm operation. hence, the system never reads a valid data on q7 bit and q6 never stops toggling. once the device has exceeded timing limits, the q5 bit will indicate a "1". please note that this is not a device failure condition since the device was incorrectly used. data protection the mx29f016 is designed to offer protection against accidental erasure or programming caused by spurious system level signals that may exist during power transition. during power up the device automatically resets the state machine in the read mode. in addition, with its control register architecture, alteration of the memory contents only occurs after successful completion of specific command sequences. the device also incorporates several features to prevent inadvertent write sector erase timer after the completion of the initial sector erase command sequence, the sector erase time-out will begin. q3 will remain low until the time-out is complete. data polling and toggle bit are valid after the initial sector erase command sequence. if data polling or the toggle bit indicates the device has been written with a valid erase command, q3 may be used to determine if the sector erase timer window is still open. if q3 is high ("1") the internally controlled erase cycle has begun; attempts to write subsequent commands to the device will be ignored until the erase operation is completed as indicated by data polling or toggle bit. if q3 is low ("0"), the device will accept additional sector erase commands. to insure the command has been accepted, the system software should check the status of q3 prior to and following each subsequent sector erase command. if q3 were high on the second status check, the command may not have been accepted. write pulse "glitch" protection noise pulses of less than 5ns(typical) on ce or we will not initiate a write cycle. logical inhibit writing is inhibited by holding any one of oe = vil, ce = vih or we = vih. to initiate a write cycle ce and we must be a logical zero while oe is a logical one. cycles resulting from vcc power-up and power-down transition or system noise. temporary sector unprotect this feature allows temporary unprotection of previously protected sector to change data in-system. the temporary sector unprotect mode is activated by setting the reset pin to vid(11.5v-12.5v). during this mode, formerly protected sectors can be programmed or erased as un- protected sector. once vid is remove from the reset pin,all the previously protected sectors are protected again.
13 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 sector protection with 12v system the mx29f016 features hardware group sector protection. this feature will disable both program and erase operations for these group sector protected. to activate this mode, the programming equipment must force vid on address pin a9 and control pin oe, (suggest vid = 12v) a6 = vil and ce = vil.(see table 2) programming of the protection circuitry begins on the falling edge of the we pulse and is terminated on the rising edge. please refer to group sector protect algorithm and waveform. to verify programming of the protection circuitry, the programming equipment must force vid on address pin a9 ( with ce and oe at vil and we at vih). when a1=1, it will produce a logical "1" code at device output q0 for a protected sector. otherwise the device will produce 00h for the unprotected sector. in this mode, the addresses, except for a1, are don't care. address locations with a1 = vil are reserved to read manufacturer and device codes.(read silicon id) it is also possible to determine if the group is protected in the system by writing a read silicon id command. performing a read operation with a1=vih, it will produce a logical "1" at q0 for the protected sector. chip unprotect with 12v system the mx29f016 also features the chip unprotect mode, so that all sectors are unprotected after chip unprotect is completed to incorporate any changes in the code. it is recommended to protect all sectors before activating chip unprotect mode. to activate this mode, the programming equipment must force vid on control pin oe and address pin a9. the ce pins must be set at vil. pins a6 must be set to vih.(see table 2) refer to chip unprotect algorithm and waveform for the chip unprotect algorithm. the unprotection mechanism begins on the falling edge of the we pulse and is terminated on the rising edge. it is also possible to determine if the chip is unprotected power-up sequence the mx29f016 powers up in the read only mode. in addition, the memory contents may only be altered after successful completion of the predefined command sequences. power supply decoupling in order to reduce power switching effect, each device should have a 0.1uf ceramic capacitor connected between its vcc and gnd. in the system by writing the read silicon id command. performing a read operation with a1=vih, it will produce 00h at data outputs(q0-q7) for an unprotected sector. it is noted that all sectors are unprotected after the chip unprotect algorithm is completed.
14 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 read operations 29F016-90 29f016-12 symbol parameter min. max. min. max. unit conditions tacc address to output delay 90 120 ns ce=oe=vil tce ce to output delay 90 120 ns oe=vil toe oe to output delay 40 50 ns ce=vil tdf oe high to output float ( note1) 0 30 0 30 ns ce=vil toh address to output hold 0 0 ns ce=oe=vil note: 1. tdf is defined as the time at which the output achieves the open circuit condition and data is no longer driven. test conditions: ? input pulse levels: 0.45v/2.4v* ? input rise and fall times is equal to or less than 20ns ? output load: 1 ttl gate + 100pf *(including scope and jig) ? reference levels for measuring timing*: 0.8v, 2.0v notes: 1. vil min. = -1.0v for pulse width is equal to or less than 50 ns. vil min. = -2.0v for pulse width is equal to or less than 20 ns. 2. vih max. = vcc + 1.5v for pulse width is equal to or less than 20 ns if vih is over the specified maximum value, read operation cannot be guaranteed. read operation dc characteristics (ta = -40 c to 85 c, vcc = 5v10%) symbol parameter min. typ max. unit conditions ili input leakage current 1 ua vin = gnd to vcc ilo output leakage current 1 ua vout = gnd to vcc isb1 standby vcc current 1 ma ce = vih isb2 0.2 5 ua ce = vcc + 0.3v icc1 operating vcc current 30 ma iout = 0ma, f=1mhz icc2 50 ma iout = 0ma, f=10mhz vil input low voltage -0.3 (note 1) 0.8 v vih input high voltage 2.0 vcc + 0.3 v vol output low voltage 0.45 v iol = 2.1ma voh output high voltage 2.4 v ioh = -2ma capacitance (ta = 25 o c, f = 1.0 mhz) symbol parameter min. typ max. unit conditions cin input capacitance 8 pf vin = 0v cout output capacitance 12 pf vout = 0v ac characteristics (ta = -40 o c to 85 o c, vcc = 5v 10%)
15 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 absolute maximum ratings rating value ambient operating temperature -40 o c to 85 o c storage temperature -65 o c to 125 o c applied input voltage -0.5v to 7.0v applied output voltage -0.5v to 7.0v vcc to ground potential -0.5v to 7.0v a9 & oe -0.5v to 13.5v notice: stresses greater than those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended period may affect reliability. notice: specifications contained within the following tables are subject to change. read timing waveforms notes: 1. vil min. = -0.6v for pulse width is equal to or less than 20ns. 2. if vih is over the specified maximum value, programming operation cannot be guranteed. 3. icces is specified with the device de-selected. if the device is read during erase suspend mode, current draw is the sum of icces and icc1 or icc2. 4. all current are in rms unless otherwise noted. dc characteristics (ta = -40 o c to 85 o c, vcc = 5v 10%) symbol parameter min. typ max. unit conditions icc1 (read) operating vcc current 30 ma iout=0ma, f=1mhz icc2 50 ma iout=0ma, f=10mhz icc3 (program) 50 ma in programming icc4 (erase) 50 ma in erase icces vcc erase suspend current 2 ma ce=vih, erase suspended command programming/data programming/erase operation addresses ce oe tacc we vih vil vih vil vih vil vih vil voh vol high z high z data valid toe tdf tce outputs toh add valid
16 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 erase/program operations 29F016-90 29f016-12 symbol parameter min. max. min. max. unit conditions toes oe setup time 50 50 ns tcwc command programming cycle 90 120 ns tcep we programming pulse width 45 50 ns tceph1 we programming pulse width high 20 20 ns tceph2 we programming pulse width high 20 20 ns tas address setup time 0 0 ns tah address hold time 45 50 ns tds data setup time 45 50 ns tdh data hold time 0 0 ns tcesc ce setup time before command write 0 0 ns tdf output disable time (note 1) 30 30 ns taetc total erase time in auto chip erase(note2,3) 32(typ.) 256 32(typ.) 256 s taetb total erase time in auto sector erase(note2,3) 4(typ.) 30 4(typ.) 30 s tavt byte programming time in auto verify(note2,3) 7(typ.) 300 7(typ.) 300 us tbal block address load time 80 80 us tch ce hold time 0 0 ns tcs ce setup to we going low 0 0 ns tvlht voltge transition time 4 4 us toesp oe setup time to we active 4 4 us twpp1 write pulse width for sector protect 10 10 us twpp2 write pulse width for sector unprotect 12 12 ms notes: 1. tdf defined as the time at which the output achieves the open circuit condition and data is no longer driven. 2. numbers are sampled, not 100% tested. 3. typical values are measured at 25 o c ,vcc=5.0v. ac characteristics ta = -40 o c to 85 o c, vcc = 5v 10%
17 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 switching test circuits switching test waveforms command write timing waveform 2.0v 2.0v 0.8v 0.8v test points 2.4v 0.45v ac testing: inputs are driven at 2.4v for a logic "1" and 0.45v for a logic "0". input pulse rise and fall times are <20ns. output input device under test diodes=in3064 or equivalent cl 1.2k ohm 1.6k ohm +5v cl=100pf including jig capacitance addresses ce oe we din tds tah data tdh tcs tch tcwc tceph1 tcep toes tas vcc 5v vih vil vih vil vih vil vih vil vih vil add valid
18 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 one byte data is programmed. verify in fast algorithm and additional programming by external control are not required because these operations are executed automatically by internal control circuit. programming completion can be verified by data polling and toggle automatic programming timing waveform bit checking after automatic verification starts. device outputs data during programming and data after programming on q7.(q6 is for toggle bit; see toggle bit, data polling, timing waveform) automatic programming timing waveform tcwc tas tcep tds tdh tdf vcc 5v ce oe q0,q1, q4(note 1) we a11~a20 tceph1 tah add valid tcesc q7 command in add valid a0~a10 command in command in data in data command in command in command in data in data data tavt toe data polling 2aah 555h 555h (q0~q7) command #55h command #a0h notes: (1). q6:toggle bit, q5:timing-limit bit, q3: time-out bit, q2: toggle bit command #aah
19 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 automatic programming algorithm flowchart start write data aah address 555h write data 55h address 2aah write program data/address write data a0h address 555h yes no . toggle bit checking q6 not toggled verify byte ok yes q5 = 1 reset auto program completed auto program exceed timing limit no invalid command yes no
20 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 all data in chip are erased. external erase verification is not required because data is erased automatically by internal control circuit. erasure completion can be verified by data polling and toggle bit checking after automatic erase starts. device outputs 0 during erasure and 1 after erasure on q7.(q6 is for toggle bit; see toggle bit, data polling, timing waveform) automatic chip erase timing waveform automatic chip erase timing waveform tcwc tas tcep tds tdh tdf vcc 5v ce oe q0,q1, q4(note 1) we a11~a20 tceph1 tah tcesc q7 command in a0~a10 command in command in command in command in command in taetc data polling 2aah 555h 555h command #aah command #55h command #80h (q0~q7) notes: (1). q6:toggle bit, q5:timing-limit bit, q3: time-out bit, q2: toggle bit 555h 2aah 555h command in command in command #aah command in command in command #55h command in command in command #10h
21 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 automatic chip erase algorithm flowchart start write data aah address 555h write data 55h address 2aah write data aah address 555h write data 80h address 555h yes no toggle bit checking q6 not toggled write data 10h address 555h write data 55h address 2aah reset auto chip erase exceed timing limit data polling q7 = 1 yes q5 = 1 auto chip erase completed no . no invalid command yes
22 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 block data indicated by a16 to a20 are erased. external erase verify is not required because data are erased automatically by internal control circuit. erasure com- pletion can be verified by data polling and toggle bit checking after automatic erase starts. device outputs 0 during erasure and 1 after erasure on q7.(q6 is for toggle bit; see toggle bit, data polling, timing waveform) automatic sector erase timing waveform automatic sector erase timing waveform tcwc tas tcep tds tdh tdf vcc 5v ce oe q0,q1, q4(note 1) we a16~a20 tceph1 tah tcesc q7 command in a0~a10 command in command in command in command in command in taetb tdpa data polling 2aah 555h 555h command #aah command #55h command #80h (q0~q7) notes: (1). q6:toggle bit, q5:timing-limit bit, q3: time-out bit, q2: toggle bit 555h 2aah command in command in command #aah command in command in command #55h command in command in command #30h sector address 0 sector address 1 tbal tceph2 sector address n command in command in command in command #30h command in command #30h
23 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 automatic sector erase algorithm flowchart start write data aah address 555h write data 55h address 2aah write data aah address 555h write data 80h address 555h yes no toggle bit checking q6 not toggled write data 30h sector address write data 55h address 2aah reset . auto sector erase exceed timing limit data polling q7 = 1 q5 = 1 auto sector erase completed load other sector addrss if necessary (load other sector address) yes no last sector to erase time-out bit checking q3=1 ? toggle bit checking q6 toggled ? invalid command no yes yes no
24 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 erase suspend/erase resume flowchart start write data b0h toggle bit checking q6 not toggled yes no write data 30h continue erase reading or programming end read array or program another erase suspend ? no . yes yes no
25 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 timing waveform for group sector protection for system with 12v toe data oe we 12v 5v 12v 5v ce a9 a1 a6 toesp twpp 1 tvlht tvlht tvlht verify 01h a20-a16 group sector address
26 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 timing waveform for chip unprotection for system with 12v toe data oe we 12v 5v 12v 5v ce a9 a1 toesp twpp 2 tvlht tvlht tvlht verify 00h a6 sector address a20-a16
27 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 sector group protection algorithm for system with 12v start set up sector group addr (a20, a19, a18) plscnt=1 sector group protection complete data=01h? . ye s oe=vid,a9=vid,ce=vil a6=vil activate we pulse time out 10us set we=vih, ce=oe=vil a9 should remain vid read from sector group addr=sga, a1=1 protect another group sector? remove vid from a9 write reset command device failed plscnt=32? ye s no no
28 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 chip unprotection algorithm for system with 12v start protect all sectors plscnt=1 chip unprotect complete data=00h? ye s set oe=a9=vid ce=vil,a6=1 activate we pulse time out 12ms set oe=ce=vil a9=vid,a1=1 set up first sector addr all sectors have been verified? remove vid from a9 write reset command device failed plscnt=1000? no increment plscnt no read data from device ye s ye s no increment sector addr * it is recommended before unprotect the whole chip, all sectors should be protected in advance.
29 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 temporary sector unprotect algorithm start reset = vid (note 1) perform erase or program operation reset = vih temporary sector unprotect completed(note 2) operation completed 2. all previously protected sectors are protected again. note : 1. all protected sectors are temporary unprotected. vid=11.5v~12.5v
30 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 id code read timing waveform tacc tce tacc toe toh toh tdf data out c2h adh vid vih vil add a9 add a2-a8 a10-a20 ce a1 oe we add a0 data out data q0-q7 vcc 5v vih vil vih vil vih vil vih vil vih vil vih vil vih vil
31 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 min. max. input voltage with respect to gnd on all pins except i/o pins -1.0v 13.5v input voltage with respect to gnd on all i/o pins -1.0v vcc + 1.0v current -100ma +100ma includes all pins except vcc. test conditions: vcc = 5.0v, one pin at a time. limits parameter min. typ.(2) max.(3) units sector erase time 4 30 sec chip erase time 32 256 sec byte programming time 7 300 us chip programming time 15 45 sec erase/program cycles 100,000 cycles latch-up characteristics erase and programming performance(1) note: 1.not 100% tested, excludes external system level over head. 2.typical values measured at 25 c,5v. 3.maximum values measured at 25 c,4.5v.
32 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 ordering information plastic package part no. access time(ns) operating standby operating package current max.(ma) current max.(ua) temperature mx29f016t4c-90 90 50 100 0 c ~70 c 40 pin tsop (normal type) mx29f016t4c-12 120 50 100 0 c ~70 c 40 pin tsop (normal type) mx29f016mc-90 90 50 100 0 c ~70 c 44 pin sop mx29f016mc-12 120 50 100 0 c ~70 c 44 pin sop mx29f016tc-90 90 50 100 0 c ~70 c 48 pin tsop (normal type) mx29f016tc-12 120 50 100 0 c ~70 c 48 pin tsop (normal type) mx29f016t4i-90 90 50 100 -40 c ~85 c 40 pin tsop (normal type) mx29f016t4i-12 120 50 100 -40 c ~85 c 40 pin tsop (normal type) mx29f016mi-90 90 50 100 -40 c ~85 c 44 pin sop mx29f016mi-12 120 50 100 -40 c ~85 c 44 pin sop mx29f016ti-90 90 50 100 -40 c ~85 c 48 pin tsop (normal type) mx29f016ti-12 120 50 100 -40 c ~85 c 48 pin tsop (normal type)
33 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 package information
34 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016
35 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016
36 p/n:pm0590 rev. 1.4, nov. 21, 2002 mx29f016 revision history revision no. description page date 1.1 del preliminary p1 oct/23/2000 1.2 correct typing error p14 jan/08/2001 correct erase/program operations tdf:40(max.)-->30(max.) p16 1.3 to modify the "chip unprotection algorithm for system with 12v" p28 jun/13/2001 flowchart add temporary sector unprotect algorithm p29 to modify the "package information" p33~35 1.4 1. to modify the package information p33~35 nov/21/2002
mx29f016 m acronix i nternational c o., l td. headquarters: tel:+886-3-578-6688 fax:+886-3-563-2888 europe office: tel:+32-2-456-8020 fax:+32-2-456-8021 japan office: tel:+81-44-246-9100 fax:+81-44-246-9105 singapore office: tel:+65-348-8385 fax:+65-348-8096 taipei office: tel:+886-2-2509-3300 fax:+886-2-2509-2200 m acronix a merica, i nc. tel:+1-408-453-8088 fax:+1-408-453-8488 chicago office: tel:+1-847-963-1900 fax:+1-847-963-1909 http : //www.macronix.com macronix international co., ltd. reserves the right to change product and specifications without notice.

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